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sailpix

Joined: 14 Apr 2005
Posts: 620
Location: wait...wait..no, keep going...ok there.
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Posted:
Tue Jun 28, 2005 2:29 am |
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BillW

Joined: 14 Apr 2005
Posts: 2507
Location: in a tightly curled dimension
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Posted:
Wed Aug 03, 2005 12:44 pm |
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Downloaders
Misc
[edited by morcheeba] |
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Nerdboy
Joined: 08 Feb 2006
Posts: 28
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Posted:
Sat Feb 11, 2006 9:14 am |
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So, I looked up my samsung chips on my rite aid cam, and they seem to be different than others posted.
Here are the chips I have:
K9T1G08U0M
128M x 8 Bits NAND Flash Memory
[url]
http://www.samsung.com/Products/Semiconductor/NANDFlash/SLC_SmallBlock/1Gbit/K9T1G08U0M/K9T1G08U0M.htm
[/url]
General Description
Offered in 128Mx8bits, the K9T1G08U0M is 1Gbit with spare 32Mbit capacity.
The device is offered in 3.3V Vcc.
Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.
A program operation can be performed in typical 200µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 50ns cycle time per byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9T1G08U0M's extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9T1G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
So... thats a 1GB flash chip, This is secondary storage(disk).
This is the other samsung chip.
K4D551638F-TC50
http://www.samsung.com/Products/Semiconductor/GraphicsMemory/DDRSDRAM/256Mbit/K4D551638F/K4D551638F.htm
General Description
FOR 4M x 16Bit x 4 Bank GDDR SDRAM
The K4D551638F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous features with Data Strobe allow extremely high performance up to 1.1GB/s/chip.
I/O transactions are possible on both edges of the clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
TC50 Specific
K4D551638F-TC50
200MHz
400Mbps/pin
SSTL_2
2.6V ± 0.1V
66pin TSOP-II
So... this is primary storage(system memory), runs at 200mhz. |
_________________ 1 BUSTED 33.04 w/ USB-B
1 BUSTED 33.04
1 PRE-BUSTED 33.04 (in process)
1 ON LOAN 33.04 w/ wax (to help cable fit)
1-Digigr8 opened/Unchanged
2-DEAD THUMBDRIVES
1-FRANKEN-THUMBDRIVE
0-HACKED CAMS |
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koikoi
Joined: 03 Mar 2006
Posts: 57
Location: BosCamberVillle, MA
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Posted:
Tue Sep 26, 2006 1:59 am |
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OS X users might be interested in PureTool since PureTool is no longer being developed. |
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